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AWT6301

CDMA/EVDO Power Amplifiers

Application:

CDMA/EVDO PCS-band wireless handsets and data devices


Description:

The AWT6301R meets the increasing demands for higher efficiency and linearity in CDMA1X handsets. The package pinout was chosen to enable handset manufacturers to switch from a 4mm x 4mm PA module with very few layout changes to the phone board. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-theart reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 Ω system.

Features:

• InGaP HBT Technology

• High Efficiency:

40%, VMODE = 0 V

41%, VMODE = +2.85 V (no mode switching)

• Low Quiescent Current: 50 mA

• Low Leakage Current in Shutdown Mode: <1 μA

• VREF = +2.85 V (+2.75 V Min Over Temp.)

• Optimized for a 50 Ω System

• Low Profile Surface Mount Package: 1.1mm

• CDMA 1XRTT, 1xEV-DO Compliant

• Pinout Enables Easy Phone Board Migration From 4 mm x 4 mm Package

• RoHS Compliant Package, 250 oC MSL-3

Specifications:

Frequency
(MHz)
824 - 849
Peak CDMA
Output Power
(dBm)
28
Power Added
Efficiency (%)
41% @ +28 dBm
Icq
(mA)
50
Package (mm) 3 x 3 x 1.1

Related Product Information

» Datasheet:
AWT6301R_Rev_2.0.pdf  (361.85 kB)
» Brochure - English:
ANADIGICS_Brochure.pdf  (4.92 MB)

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