AWT6302
CDMA Power Amplifiers
Application:
PCS CDMA Wireless Handsets
Dual-Band CDMA Wireless Handsets
Description:
The AWT6302 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by 44%. The package pinout was chosen to enable handset manufacturers to switch from a 4 x 4 mm PA podule with very few layout changes to the phone board. The PA module is optimized for Vref = +2.85 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 3 x 3 x 1.1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
Features:
- InGap HBT Technology
- High Efficiency: 39 %
- Low Quiescent Current: 48 mA
- Low Leakage Current in Shutdown Mode: <1 µA
- Vref = +2.85 V (+2.75 V min over temp)
- Optimized for a 50 Ω System
- Low Profile Miniature Surface Mount Package: 1.1 mm max
- CDMA 1XRTT, 1xEV-DO Compliant
- Pinout Enables Easy Phone Board Migration From 4 x 4 mm Package
Specifications:
| Frequency (MHz) | 1850-1910 |
| Package Size (mm) | 3 x 3 x 1.1 |
| PAE (%) | 39 |
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