Dual/Tri/Quad Band Handsets, PDAs and Data Devices
This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for excellent EDGE efficiency, power, and linearity in a Polar loop environment while maintaining high efficiency in the GSM/GPRS mode.
The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function.Furthermore, the power control function includes battery detection circuitry for robust ORFS transient spectrum performance at low battery voltages.
The amplifier’s power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are internally matched to 50 Ω.
• Internal Reference Voltage
• Integrated Power Control
• InGaP HBT Technology
• ESD Protection on All Pins (2.5 kV)
• Automatic VBATT tracking
• Low profile 1.0 mm
• Small Package Outline 5 mm x 5 mm
• EGPRS Capable (class 12)
• RoHS Compliant Package, 250 °C MSL-3
• Halogen-Free
GMSK MODE
• Integrated power control (CMOS)
• +35 dBm GSM850/900 Output Power
• +33 dBm DCS/PCS Output Power
• 55 % GSM 900 PAE
• 51 % DCS/PCS PAE
• Power control range > 50 dB
EDGE MODE
• +29 dBm GSM850/900 Output Power
• +28.5 dBm DCS/PCS Output Power
• 28% GSM850/900 PAE
• 28% DCS/PCS PAE
• 64 dB Typical ACPR (400 kHz)
• 74 dB Typical ACPR (600 kHz)
| Frequency (MHz) | Quad Band |
| Package Size (mm) | 5 x 5 x 1 |
| Output Power (dBm) Typ |
(GSM) GSM850/900: 35 DCS/PCS: 33 (EDGE) GSM850/900: 29 DCS/PCS: 28.5 |
| Efficiency (%) |
(GSM) GSM850/900: 55 DCS/PCS: 51 (EDGE) GSM850/900: 28 DCS/PCS: 28 |
| 2nd Harmonic (dBm) | -20 |
| 3rd Harmonic (dBm) | -25 |
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