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AWT6275

WCDMA/HSPA Power Amplifiers

Application:

WCDMA/HSPA IMT-Band Wireless Handsets and Data Devices


Description:

The AWT6275 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 V system.

Features:

  • InGaP HBT Technology
  • High Efficiency:
    • 43 % @ POUT = +27.5 dBm
    • 21 % @ POUT = +16 dBm
    • 15 % @ POUT = +7 dBm
  • Low Quiescent Current: 16 mA
  • Low Leakage Current in Shutdown Mode: <1 µA
  • VREF = +2.85 V (+2.75 V min over temp)
  • Optimized for a 50 Ω System
  • Low Profile Miniature Surface Mount Package: 1.1 mm Max
  • RoHS Compliant Package, 250°C MSL-3
  • HSPA Capable

Specifications:

Frequency
(MHz) 		1920 - 1980
Peak HSPA
Output Power
(dBm) 		26.5
Power Added
Efficiency (%) 		43% @ +27.5 dBm
21% @ +16 dBm
15% @ +7 dBm
Icq
(mA) 		16
Package
(mm) 		4 x 4 x 1

Related Product Information

» Datasheet:
AWT6275_Rev_2.2.pdf  (393.59 kB)
» Brochure - English:
ANADIGICS_Brochure.pdf  (4.92 MB)
» Application Note:
WCDMA_IMT_PCS_4x4_AppNote_Rev0.pdf  (773.35 kB)

Press Releases:

» ANADIGICS Introduces World's Most Efficient WCDMA Power Amplifiers

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