AWT6272

WCDMA Power Amplifiers

Application:

Dual Band WCDMA Wireless Handsets
Dual Mode 3GPP Wireless Handsets

Description:

The AWT6272 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for Vref = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

Features:

InGaP HBT Technology
High Efficiency:
45 % @ Pout = +29 dBm
20 % @ Pout = +16 dBm
15 % @ Pout = +7 dBm
Low Quiescent Current: 16 mA
Low Leakage Current in Shutdown Mode: <1 µA
Vref = +2.85 V (+2.75 V min over temp)
Optimized for a 50 Ω System
Low Profile Surface Mount Package Option: 1.1 mm Max
RoHS Compliant Package, 250°C MSL-3
HSDPA Compliant (no backoff)

Specifications:

Frequency (MHz)	824-849
Package Size (mm)	4 x 4 x 1.1
PAE (%)	45

Related Product Information

»	Datasheet: AWT6272_Rev_2.0.pdf (420.48 kB)
»	Brochure - English: Wireless_Products_Brochure.pdf (1.05 MB)
»	Brochure - Simplified Chinese: Wireless_Brochure_Simplified_Chinese.pdf (946.36 kB)
»	Application Note: WCDMA_Cell_4x4_AppNote_Rev_1.pdf (571.16 kB)

Press Releases:

»	ANADIGICS Expands HELP™ WCDMA Power Amplifier Family
»	ANADIGICS Selected as Primary Supplier for Sierra Wireless' HSDPA AirCard® Products
»	ANADIGICS' WCDMA (UMTS) EDGE Power Amplifier Modules Adopted for Advanced Reference Design by QUALCOMM

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